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| BS208 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features * * * * * High Breakdown Voltage High Input Impedance Fast Switching Speed Low Drain-Source On-Resistance Specially Suited for Telephone Subsets E A B TO-92 Dim A B C Min 4.45 4.46 12.7 0.41 3.43 2.42 1.14 Max 4.70 4.70 -- 0.63 3.68 2.67 1.40 Mechanical Data * * * * Case: TO-92, Plastic Leads: Solderable per MIL-STD-202, Method 208 Pin Connections: See Diagram Weight: 0.18 grams (approx.) D BOTTOM VIEW C D E G H SG D All Dimensions in mm H G H Maximum Ratings Drain-Source-Voltage Drain-Gate-Voltage @ TA = 25C unless otherwise specified Symbol -VDSS -VDGS VGS -ID Pd Tj, TSTG Value 240 200 20 200 830 -55 to +150 Unit V V V mA mW C Characteristic Gate-Source-Voltage (pulsed) (Note 2) Drain-Current (continuous) Power Dissipation @TC = 25C (Note 1) Operating and Storage Temperature Range Inverse Diode @ TA = 25C unless otherwise specified Characteristic Symbol IF VF Value 0.22 0.85 Unit A V Maximum Forward Current (continuous) Forward Voltage Drop (Typical) @ VGS = 0, IF = 0.75A, Tj = 25C Electrical Characteristics @ TA = 25C unless otherwise specified Characteristic Drain-Source Breakdown Voltage Gate-Body Leakage Current Drain-Source Cutoff Current Gate-Source Threshold Voltage Drain-Source ON Resistance Thermal Resistance Junction to Ambient Input Capacitance Output Capacitance Feedback Capacitance Notes: Symbol -V(BR)DSS -IGSS -IDSS -IDSX -VGS(th) rDS(ON) RqJA Ciss Coss Crss Min 200 -- -- -- -- -- -- Typ 230 -- -- 2.8 7.0 -- 270 35 6.0 Max -- 10 1.0 25 4.0 14 150 -- Unit V nA A V W K/W pF Test Condition -ID = 100A, VGS = 0 -VGS = 15V, VDS = 0 -VDS =130V, VGS = 0 -VDS = 10V, -VGS = 0.2V VGS = VDS, -ID = 1.0mA -VGS = 10V, -ID = 100 mA Note 1 -VDS = 20V, VGS= 0, f =1.0MHz 1. Valid provided that leads are kept at ambient temperature at a distance of 2.0mm from case. 2. Pulse Test: Pulse width = 80s, duty factor = 1%. DS21901 Rev. E-3 1 of 2 BS208 1 2.0 -ID (ON), DRAIN ON-CURRENT (A) See Note 2 TA = 25C -VGS = 9V Pd, POWER DISSIPATION (W) 0.8 (See Note 1) 1.6 8 7 0.6 1.2 6 0.4 0.8 5 0.2 0.4 4 3.5 3 0 0 100 TA, AMBIENT TEMPERATURE (C) Fig. 1. Power Derating Curve 200 0 0 20 40 60 80 100 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 2, Output Characteristics 500 See Note 2 5.0 TA = 25C 1.0 -IDS, DRAIN-SOURCE CURRENT (A) (See Note 2) TA = 25C -VDS = 25V -ID, DRAIN ON-CURRENT (mA) 400 0.8 300 -VGS = 4.5V 0.6 200 0.4 100 4.0 0.2 0 0 2 4 6 3.5 0 10 8 0 2 4 6 8 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 3. Saturation Characteristics -VGS, GATE-SOURCE VOLTAGE (V) Fig. 4. Drain-Source Current vs Gate-Source Voltage gfs, FORWARD TRANSCONDUCTANCE (mm) gf s, FORWARD TRANSCONDUCTANCE (mm) 500 -VDS = 25V See Note 2 1000 -VDS = 25V See Note 2 400 800 300 600 200 400 100 200 0 0 2 4 6 8 10 0 0 500 1000 -ID, DRAIN CURRENT (mA) Fig. 6. Transconductance vs. Drain Current -VGS, GATE-SOURCE VOLTAGE (V) Fig. 5. Transconductance vs Gate-Source Voltage DS21901 Rev. E-3 2 of 2 BS208 |
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